High Density Embedded PCM Cell in 28nm FDSOI Technology for Automotive Micro-Controller Applications
F. Arnaud, Paulo Ferreira, F. Piazza, A. Gandolfo, P. Zuliani, Paolo Mattavelli, E. Gomiero, G. Samanni, J. Jasse, C. Jahan, J.-P. Reynard, R. Berthelon, O. Weber, A. Villaret, B. Dumont, Jean-Christophe Grenier, R. Ranica, C. Gallon, C. Boccaccio, A. Souhaité, L. Desvoivres, D. Ristoiu, L. Favennec, V. Caubet, S. Delmedico, N. Chérault, R. Beneyton, S. Chouteau, Pierre-Olivier Sassoulas, L. Clement, P. Boivin, David Turgis, F. Disegni, J.-L. Ogier, X. Federspiel, O. Kermarrec, M. Molgg, A. Viscuso, R. Annunziata, A. Maurelli, P. Cappelletti, E. Ciantar
Abstract
In this paper we present an enhancement of our 28nm FDSOI-PCM solution using Bipolar Junction Transistor (BJT) selector co-integrated with triple gate oxide devices scheme (logic/1,8V/5V) for advanced automotive microcontroller designs. Leveraging FDSOI substrate, innovative Super-STI (SSTI) scheme has been developed enabling 0,019um <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> PCM cell. It is the densest eNVM cell reported so far, based on our knowledge. Ultimate analog performance targets for automotive have been successfully demonstrated without compromising reliability for 5V transistor thanks to a novel gate stack & spacers architecture. Automotive grade-0 reliability criteria have been achieved on 16MB PCM array, including 3x aggressive runs of soldering reflow thermal stress (265°C/210s). Finally, wide reading window has been shown even after 250K writing operation at 165°C.