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A D-band 20.4 dBm OP<sub>1dB</sub> Transformer-Based Power Amplifier With 23.6% PAE In A 250-nm InP HBT Technology

Senne Gielen, Yang Zhang, Mark Ingels, Patrick Reynaert

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Abstract

This paper presents a high-efficiency transformer-based D-band power amplifier (PA) in 250-nm InP HBT. The PA has a saturated output power of 21 dBm and peak power-added efficiency (PAE) of 23.6 %. The small-signal gain and bandwidth are 19.8 dB and 24.4 GHz respectively. Careful design of the biasing networks results in a record OP <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1dB</inf> and associated PAE of 20.4 dBm and 23% respectively. To the authors best knowledge this is the highest PAE ever reported at <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{P}_{\mathrm{l}\mathrm{d}\mathrm{B}}$</tex> for D-band power amplifiers, resulting in record output power and efficiency during modulated measurements up to 20 Gb/s.

Topics & Concepts

dBmAmplifierHeterojunction bipolar transistorElectrical engineeringTransformerBandwidth (computing)PhysicsMaterials scienceOptoelectronicsComputer scienceTelecommunicationsEngineeringVoltageTransistorBipolar junction transistorRadio Frequency Integrated Circuit DesignAdvanced Power Amplifier DesignMicrowave Engineering and Waveguides
A D-band 20.4 dBm OP<sub>1dB</sub> Transformer-Based Power Amplifier With 23.6% PAE In A 250-nm InP HBT Technology | Litcius