Insights into the Hydrogen‐Related Mechanism behind Defect Formation during Light‐ and Elevated‐Temperature‐Induced Degradation
Benjamin Hammann, Lazhar Rachdi, Wolfram Kwapil, Florian Schindler, Martin C. Schubert
Abstract
By investigating the formation of light‐ and elevated‐temperature‐induced degradation (LeTID) defects under dark annealing conditions alongside the formation of the boron–hydrogen complex, it is found that both formations are limited by presumably the same reaction. Starting with this observation, two possible mechanisms of LeTID defect formation, a hydrogen‐related association and dissociation process, are discussed. Including the current knowledge on hydrogen in silicon as well as on the reverse reaction to the defect formation, the dissociation mechanism seems to be more likely: the LeTID precursor is composed of hydrogen being bound to another complex. During dark annealing, the hydrogen dissociates and binds to its sink, which herein is boron. The remaining complex is recombination active and leads thus to the observed degradation.