Physics-Based SPICE Modeling of Dynamic on-State Resistance of p-GaN HEMTs
Sheng Li, Yanfeng Ma, Chi Zhang, Weihao Lu, Mengli Liu, Mingfei Li, Lanlan Yang, Siyang Liu, Jiaxing Wei, Long Zhang, Weifeng Sun, Jiaxin Sun
Abstract
This letter introduces a new physics-based SPICE modeling method for the dynamic <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> -state resistance ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><small>on</small>,dy</sub> ) of gallium nitride based p-type gate power high electron mobility transistors (p-GaN HEMTs). To describe the continuous variations of <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><small>on</small>,dy</sub> , a time-resolved electron mobility variation (Δ <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">μ</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> ) model is proposed. Physical parameters including activation energy and voltage acceleration factor of traps in p-GaN HEMTs are extracted as the model parameters. Then, to achieve the goal of simulating <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><small>on</small>,dy</sub> , the proposed Δ <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">μ</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> model is incorporated into the surface potential based advanced SPICE model for GaN HEMT. Simulative results prove the proposed models can predict the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <small>on</small>,dy</sub> induced power loss.