Growth modulation of atomic layer deposition of HfO<sub>2</sub> by combinations of H<sub>2</sub>O and O<sub>3</sub> reactants
Byeong Guk Ko, Chi Thang Nguyen, Bonwook Gu, Mohammad Rizwan Khan, Kunwoo Park, Hongjun Oh, Jungwon Park, Bonggeun Shong, Han‐Bo‐Ram Lee
Abstract
O. The film growth behaviors and properties differed when the sequence of exposure of the substrate to the reactants was varied. Based on X-ray photoelectron spectroscopy (XPS) and density functional theory (DFT) simulation, the changes are attributed to the effects of the surface terminations formed from different counter reactant combinations. The knowledge from this work could provide insight for precisely tuning the growth and properties of ALD films.
Topics & Concepts
Atomic layer depositionX-ray photoelectron spectroscopySubstrate (aquarium)Deposition (geology)Thin filmLayer (electronics)Density functional theoryChemistryMaterials scienceAnalytical Chemistry (journal)Chemical engineeringNanotechnologyComputational chemistryOrganic chemistrySedimentPaleontologyEngineeringOceanographyGeologyBiologySemiconductor materials and devicesElectronic and Structural Properties of OxidesFerroelectric and Negative Capacitance Devices