Self-powered photodetector with low dark current based on the InSe/β-Ga<sub>2</sub>O<sub>3</sub> heterojunctions
Yuqing Wang, Shuo Zhao, Haiying Xiao, Jinzhong Wang, PingAn Hu, Jun Peng Qiao, Yongqiang Zhang, Heng Hu
Abstract
InSe/β-Ga 2 O 3 heterojunction detects 230 nm deep UV under zero bias.
Topics & Concepts
PhotodetectorHeterojunctionMaterials scienceDark currentOptoelectronicsGa2O3 and related materialsZnO doping and propertiesElectronic and Structural Properties of Oxides