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Metavalent Bonding-Mediated Dual 6s<sup>2</sup> Lone Pair Expression Leads to Intrinsic Lattice Shearing in n-Type TlBiSe<sub>2</sub>

Ivy Maria, Raagya Arora, Moinak Dutta, Subhajit Roychowdhury, Umesh V. Waghmare, Kanishka Biswas

2023Journal of the American Chemical Society54 citationsDOI

Abstract

Metavalent bonding has attracted immense interest owing to its capacity to impart a distinct property portfolio to materials for advanced functionality. Coupling metavalent bonding to lone pair expression can be an innovative way to propagate lattice anharmonicity from lone pair-induced local symmetry-breaking via the soft p -bonding electrons to achieve long-range phonon dampening in crystalline solids. Motivated by the shared chemical design pool for topological quantum materials and thermoelectrics, we based our studies on a three-dimensional (3D) topological insulator TlBiSe 2 that held prospects for 6 s 2 dual-cation lone pair expression and metavalent bonding to investigate if the proposed hypothesis can deliver a novel thermoelectric material. Herein, we trace the inherent phononic origin of low thermal conductivity in n-type TlBiSe 2 to dual 6 s 2 lone pair-induced intrinsic lattice shearing that strongly suppresses the lattice thermal conductivity to a low value of 1.1–0.4 Wm –1 K –1 between 300 and 715 K. Through synchrotron X-ray pair distribution function and first-principles studies, we have established that TlBiSe 2 exists not in a monomorphous R- 3 m structure but as a distribution of distorted configurations. Via a cooperative movement of the constituent atoms akin to a transverse shearing mode facilitated by metavalent bonding in TlBiSe 2, the structure shuttles between various energetically accessible low-symmetry structures. The orbital interactions and ensuing multicentric bonding visualized through Wannier functions augment the long-range transmission of atomic displacement effects in TlBiSe 2 . With additional point-defect scattering, a κ latt of 0.3 Wm –1 K –1 was achieved in TlBiSeS with a maximum n-type thermoelectric figure of merit ( zT ) of ∼0.8 at 715 K.

Topics & Concepts

Lone pairChemistryCondensed matter physicsCrystallographyTranslational symmetryPhysicsMoleculeOrganic chemistryAdvanced Thermoelectric Materials and DevicesThermal properties of materialsTopological Materials and Phenomena
Metavalent Bonding-Mediated Dual 6s<sup>2</sup> Lone Pair Expression Leads to Intrinsic Lattice Shearing in n-Type TlBiSe<sub>2</sub> | Litcius