High-performance p–i–n perovskite photodetectors and image sensors with long-term operational stability enabled by a corrosion-resistant titanium nitride back electrode
Tian Sun, Tong Chen, Jiahao Chen, Qiang Lou, Zihao Liang, Guijun Li, Xiaoyun Lin, Guoshen Yang, Hang Zhou
Abstract
, which is approximately two orders of magnitude higher than that of the control device without a TiN layer. Under continuous illumination of a 520 nm green light for 576 000 cycles, the responsivity of the TiN-based photodetector remains at 94.27% of its initial value. The TiN-based photodetector exhibits superior stability under thermal stress. After aging at 85 °C for 572 h, the TiN-based photodetector retains 72% of its initial responsivity. Using the TiN-based photodiode, a perovskite image sensor containing 64 × 64 pixelated perovskite photodiodes is constructed over an amorphous silicon thin-film transistor (TFT) backplane. The perovskite image sensor exhibits real-time imaging capability and long-term stability for over 6 months. This study highlights the importance of using metallic nitrides to achieve high-performance and air-stable perovskite devices for optoelectronic applications.