Light trapping enhanced broadband photodetection and imaging based on MoSe2/pyramid Si vdW heterojunction
Shaoqin Pan, Shuo‐En Wu, Jinjin Hei, Zhiwen Zhou, Longhui Zeng, Yakun Xing, Pei Lin, Zhifeng Shi, Yongtao Tian, Xinjian Li, Di Wu
Abstract
Two-dimensional (2D) layered materials have been considered promising candidates for next-generation optoelectronics. However, the performance of 2D photodetectors still has much room for improvement due to weak light absorption of planar 2D materials and lack of high-quality heterojunction preparation technology. Notably, 2D materials integrating with mature bulk semiconductors are a promising pathway to overcome this limitation and promote the practical application on optoelectronics. In this work, we present the patterned assembly of MoSe2/pyramid Si mixed-dimensional van der Waals (vdW) heterojunction arrays for broadband photodetection and imaging. Benefited from the light trapping effect induced enhanced optical absorption and high-quality vdW heterojunction, the photodetector demonstrates a wide spectral response range from 265 to 1550 nm, large responsivity up to 0.67 A·W−1, high specific detectivity of 1.84 × 1013 Jones, and ultrafast response time of 0.34/5.6 μs at 0 V. Moreover, the photodetector array exhibits outstanding broadband image sensing capability. This study offers a novel development route for high-performance and broadband photodetector array by MoSe2/pyramid Si mixed-dimensional heterojunction.