Recent progress in spin-orbit torque magnetic random-access memory
V.D. Nguyen, Siddharth Rao, Kurt Wostyn, Sébastien Couet
Abstract
Abstract Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes. We review recent advancements in perpendicular SOT-MRAM devices, emphasizing on material developments to enhance charge-spin conversion efficiency and large-scale device integration strategies. We also discuss the remaining challenges in achieving a single device with low switching current, reliable field free switching to unlock the full potential of SOT-MRAM technology.
Topics & Concepts
Condensed matter physicsOrbit (dynamics)Random access memoryTorquePhysicsSpin (aerodynamics)Computer scienceAerospace engineeringQuantum mechanicsEngineeringComputer hardwareThermodynamicsMagnetic properties of thin filmsAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices