Tin dioxide buffer layer-assisted efficiency and stability of wide-bandgap inverted perovskite solar cells
Bingbing Chen, Pengyang Wang, Ningyu Ren, Renjie Li, Ying Zhao, Xiaodan Zhang
Abstract
Abstract Inverted perovskite solar cells (IPSCs) have attracted tremendous research interest in recent years due to their applications in perovskite/silicon tandem solar cells. However, further performance improvements and long-term stability issues are the main obstacles that deeply hinder the development of devices. Herein, we demonstrate a facile atomic layer deposition (ALD) processed tin dioxide (SnO 2 ) as an additional buffer layer for efficient and stable wide-bandgap IPSCs. The additional buffer layer increases the shunt resistance and reduces the reverse current saturation density, resulting in the enhancement of efficiency from 19.23% to 21.13%. The target device with a bandgap of 1.63 eV obtains open-circuit voltage of 1.19 V, short circuit current density of 21.86 mA/cm 2 , and fill factor of 81.07%. More importantly, the compact and stable SnO 2 film invests the IPSCs with superhydrophobicity, thus significantly enhancing the moisture resistance. Eventually, the target device can maintain 90% of its initial efficiency after 600 h storage in ambient conditions with relative humidity of 20%–40% without encapsulation. The ALD-processed SnO 2 provides a promising way to boost the efficiency and stability of IPSCs, and a great potential for perovskite-based tandem solar cells in the near future.