A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs
Gang Lyu, Jin Wei, Wenjie Song, Zheyang Zheng, Li Zhang, Jie Zhang, Yan Cheng, Sirui Feng, Yat Hon Ng, Tao Chen, Kailun Zhong, Jiapeng Liu, Rong Zeng, Kevin J. Chen
Abstract
A novel GaN power IC platform on engineered bulk Si (EBUS) substrate is demonstrated for monolithic integration of 200-V high-side and low-side p-GaN HEMTs of a half-bridge circuit. The engineered substrate features a P+-N-doping profile realized by P-type implantation into an N-type (111) Si wafer. The P+ Si layer is then split into P+ islands using deep trenches and are effectively isolated through back-to-back PN junctions. The P+ island provides a local electrical substrate for the overlaying GaN HEMT, while all GaN HEMTs share the same bulk Si wafer; such configuration enables monolithic GaN power integration with eliminated crosstalk associated with conventional bulk Si that serves as a common electrical substrate.