An enhanced ultrasensitive solar-blind UV photodetector based on an asymmetric Schottky junction designed with graphene/β-Ga<sub>2</sub>O<sub>3</sub>/Ag
Song Qi, Jiahang Liu, Jianying Yue, Xueqiang Ji, Jiaying Shen, Yongtao Yang, Jinjin Wang, Shan Li, Zhenping Wu, Weihua Tang
Abstract
The device has a dark current of 12.09 pA and achieves an outstanding responsivity of 44.09 A W −1 , a high detectivity of 5.84 × 10 12 Jones.
Topics & Concepts
ResponsivityMaterials sciencePhotodetectorGrapheneOptoelectronicsDark currentSchottky barrierSchottky diodeNanotechnologyDiodeGa2O3 and related materialsZnO doping and propertiesElectronic and Structural Properties of Oxides