Characterization of dislocation of halide vapor phase epitaxial (001) <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodes
Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, Makoto Kasu
Abstract
Abstract This study elucidates the dislocation responsible for the leakage current in a halide vapor phase epitaxial (001) β-Ga 2 O 3 Schottky barrier diode. A high reverse leakage current of −0.98 μ A was observed at −100 V as an emission pattern via ultrahigh-sensitive emission microscopy. This was attributed to the presence of dislocation. Moreover, the Burgers vector of this dislocation was determined to be ⫽ 〈1 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mover accent="true"> <mml:mn>3</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> </mml:math> 2〉 from the g · b invisibility criteria via synchrotron X-ray topography observation. This dislocation was speculated to be induced by the relaxation of the strain field surrounding the void and subsequently propagated to the surface. Cross-sectional scanning transmission electron microscopy revealed multiple threading dislocations along the (100) plane.