Modeling and Simulation Characteristics of a Highly-Sensitive Stack-Engineered Junctionless Accumulation Nanowire FET for PH<sub>3</sub> Gas Detector
Neeraj Neeraj, Shobha Sharma, Anubha Goel, Sonam Rewari, S. S. Deswal, R.S. Gupta
Abstract
In this manuscript, a Stack Engineered Junctionless Accumulation Nanowire FET (SE-JAM-NW FET) has been proposed for low - power and high sensitivity phosphine (PH 3 ) gas detection applications. In comparison to a standard nanowire FET, the SE-JAM-NW FET is used at nanoscale dimensions because of its inherent benefits, including low cost, improved portability, low Off- state current and increased On-state current with low - power consumption. To implement the SE-JAM-NW FET as a phosphine gas sensor, four catalytic metals, Platinum (Pt), Rhodium (Rh), Iridium (Ir) & Palladium (Pd) have been employed as gate electrodes. For designing gas sensor, various electric parameters like potential, electron concentration, recombination rate and electron velocity are evaluated for PH 3 gas detection. To forecast the sensor’s response, analog characteristics like changes in drain current, transconductance & output conductance are being simulated for different catalytic metal work functions (200 meV, 150 meV, 100 meV and 50 meV) at the gate electrode. The variation in On-state current-to-Off-state current ratio (I On /I Off ), On-state current (I On ) & subthreshold leakage current (I Off ) for sensing the gas molecules has been used to quantify the sensitivity. The effects of silicon pillar-based radius variation and channel length variation on the sensitivity-based parameters are also investigated. Each catalytic metal exhibits improved sensitivity with increased channel length and decreased radius. The outcomes of the ATLAS 3-D device simulator’s numerical simulation closely match with those of the derived analytical model.