Non-damaging growth and band alignment of p-type NiO/β-Ga<sub>2</sub>O<sub>3</sub> heterojunction diodes for high power applications
Ji Young Min, Madani Labed, Chowdam Venkata Prasad, Jung Yeop Hong, Young-Kyun Jung, You Seung Rim
Abstract
We developed NiO/β-Ga 2 O 3 heterojunction power devices with a breakdown voltage of −644 V, a low leakage current of about 1 × 10 −6 (A cm −2 ) at −600 V and an on-resistance of 10.85 mΩ cm 2 with high thermal stability with the operation temperature higher than 130 °C.
Topics & Concepts
Materials scienceHeterojunctionNon-blocking I/ODiodeOptoelectronicsThermal stabilityBreakdown voltageLeakage (economics)VoltageElectrical engineeringChemical engineeringCatalysisChemistryEngineeringEconomicsMacroeconomicsBiochemistryGa2O3 and related materialsZnO doping and propertiesAdvanced Photocatalysis Techniques