Nonlocal Memory Dependent Derivative Analysis of a Photo-Thermoelastic Semiconductor Resonator
Iqbal Kaur, Kulvinder Singh
Abstract
The coupled photo-thermoelastic analysis in semiconductor resonator with nonlocal Memory dependent derivative (MDD) theory is presented. One end of the beam is excited by an abruptly increasing temperature and transient behavior for three cases of plasma field such as unit step, non-Gaussian, and sinusoidal time-based plasma shock loading. The mathematical formulation is done using Rayleigh beam theory combined with Eringen’s nonlocal theory (ENT). The Laplace transform method is employed for obtaining the solution in the transformed domain. An Inverse Laplace technique is utilized for obtaining the dynamic and transient behaviors of field variables in the time domain. With the help of MATLAB programming, the results have been numerically analyzed for silicon material. The lateral deflection, temperature change, and plasma density has been represented graphically to analyse the effect of nonlocal small scale parameter and different types of kernel function of MDD.