Proposition of Adaptive Read Bias: A Solution to Overcome Power and Scaling Limitations in Ferroelectric‐Based Neuromorphic System
Ryun‐Han Koo, Wonjun Shin, Seung Whan Kim, Jiseong Im, Sungho Park, Jonghyun Ko, Dongseok Kwon, Dongseok Kwon, Jae‐Joon Kim, Daewoong Kwon, Daewoong Kwon, Jong‐Ho Lee
Abstract
Abstract Hardware neuromorphic systems are crucial for the energy‐efficient processing of massive amounts of data. Among various candidates, hafnium oxide ferroelectric tunnel junctions (FTJs) are highly promising for artificial synaptic devices. However, FTJs exhibit non‐ideal characteristics that introduce variations in synaptic weights, presenting a considerable challenge in achieving high‐performance neuromorphic systems. The primary objective of this study is to analyze the origin and impact of these variations in neuromorphic systems. The analysis reveals that the major bottleneck in achieving a high‐performance neuromorphic system is the dynamic variation, primarily caused by the intrinsic 1/ f noise of the device. As the device area is reduced and the read bias ( V Read ) is lowered, the intrinsic noise of the FTJs increases, presenting an inherent limitation for implementing area‐ and power‐efficient neuromorphic systems. To overcome this limitation, an adaptive read‐biasing (ARB) scheme is proposed that applies a different V Read to each layer of the neuromorphic system. By exploiting the different noise sensitivities of each layer, the ARB method demonstrates significant power savings of 61.3% and a scaling effect of 91.9% compared with conventional biasing methods. These findings contribute significantly to the development of more accurate, efficient, and scalable neuromorphic systems.