Optoelectronic Reconfigurable Logic Gates Based on Two-Dimensional Vertical Field-Effect Transistors
Zinan Ma, Peize Yuan, Li Lin, Xiaojie Tang, Xueping Li, Suicai Zhang, Leiming Yu, Yurong Jiang, Xiaohui Song, Congxin Xia
Abstract
Optoelectronic reconfigurable logic gates are promising candidates to meet the multifunctional and energy-efficient requirements of integrated circuits. However, complex device architectures need more power and hinder multifunctional device applications. Here, we design vertical field-effect transistors (VFET) based on the two-dimensional (2D) graphene/MoS 2 /WSe 2 /graphene van der Waals heterojunction forming ohmic and Schottky contact. The modulation of the Schottky barrier via gate bias enables the device to switch between positive and negative photocurrents, which can effectively achieve optoelectronic reconfigurable logic gates (XNOR, NOR, NAND, AND, OR, and Inhibit) in a single device. Particularly, the transistor number is reduced by 75% for (“XNOR”, “NOR”, “NAND”) and 83% for (“AND”, “OR”) gates compared to traditional logic circuits. This work provides a promising route for using a single device to realize optoelectronic reconfigurable logic gates, which can advance the development of high-speed, high-throughput, and intricate data processing in future optical computing applications.